The KrF excimer laser irradiation effect on GaAs ALE was investigated by the surface process model. It was confirmed that the decomposition rate of TMG adsorbed on the surface As atoms was increased, and its activation energy was decreased due to KrF excimer laser irradiation. In selective growth using substrates partially masked with SiO2, it was found that a large amount of TMG molecules diffused to the GaAs surface from the SiO2 mask in a low temperature range, but very few TMG molecules diffused to the GaAs surface from the SiO2 mask in a high temperature range.
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Ishikawa et al. (1989) studied this question.
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