A miniaturized Marchand balun combiner is proposed for a W-band power amplifier (PA). The proposed combiner reduces the electrical length of the transmission lines (transmission line) from about 80°to 30°, when compared with a conventional Marchand balun combiner. Implemented in a 1-V 65-nm CMOS process, the presented PA achieves a measured saturated output power of 11.9 dBm and a peak power-added efficiency of 9.0% at 87 GHz. The total chip area (with pads) is 0.77×0.48 mm2, where the size of the balun combiner is only 0.36×0.13 mm2.
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Jia et al. (2015) studied this question.
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