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A wide-band-gap (> 2.0 eV) hydrogenated amorphous silicon (a-Si:H) film showing visible photoluminescence (PL) is obtained by rf glow-discharge decomposition of SiH4 highly diluted with He. The PL and the structural properties of the a-Si:H are investigated. The He dilution leads to the extension of the band gap and the increase of the SiH2 and ( SiH2) n configurations in the film. The PL increases rapidly and blue-shifts consistently with the increase of the SiH2 and (SiH2) n configurations. By observation using transmission electron microscopy and Raman scattering, it is found that the film consists of uniform amorphous structure and includes no microcrystallites. The film exhibits a photoconductivity (under AM-1 light of 100 mW/cm2) to dark conductivity ratio of over 106 in addition to a visible PL at room temperature. This new a-Si:H film has potential for application to an optical device with characteristics of both light emission and photosensitivity.
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Akiyama et al. (1994) studied this question.
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