Modification of a low-pressure CVD reactor and the similar deposition chemistries of Ti(NO3)4, Sn(NO3)4, and Hf(NO3)4 allowed the growth of films on silicon exhibiting a compositional spread of the respective metal dioxides. Electrical measurements of 100 × 100 μm capacitors (shown in the picture) suggest that the dielectric constant of the film can be estimated by a weighted average of the dielectric constants of the individual oxides.
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Smith et al. (2002) studied this question.
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