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August 5, 1996Applied Physics Letters

Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques

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Authors

FPF. A. PoncePalo Alto Research CenterDCD. ChernsUniversity of BristolWYW. T. YoungUniversity of Surrey

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Cite This Study

Ponce et al. (1996) studied this question.

synapsesocial.com/papers/6a8bdb7fc716e89f35deff27https://doi.org/10.1063/1.117886
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