Effect of ion implantation induced defects on optical attenuation in silicon waveguides

The effect of ion implantation induced defects on optical attenuation in silicon waveguides has been investigated for MeV self-ion implantation. A lower limit of 1200 dB cm−1 for a dose of 1×1014 cm−2 has been measured. The results can be approximated by a simple analytical expression and hence extended to a wider range of implantation species, doses and energies.