We report the influence of La substitution in epitaxial BiFeO3 thin films prepared by pulsed layer deposition on a Nb-doped SrTiO3 substrate, focusing on ferroelectric domain structure, leakage current, and multiferroic properties. Enhanced ferroelectric remanent polarization and reduced leakage current density were established via La substitution in the BiFeO3 film. Based on leakage conduction mechanism and piezoelectric force microscopy studies, this is indicative of reduced trap densities and increased domain energy. Besides that, the ferromagnetic properties were improved by the La doping as well. The possible mechanisms for the enhancement of electrical and multiferroic characteristics are extensively discussed.
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Kim et al. (2013) studied this question.
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