What question did this study set out to answer?

To measure the real-time evolution of mechanical stress in gallium nitride films grown on sapphire substrates during metalorganic chemical vapor deposition.

January 18, 1999Applied Physics Letters

Stress evolution during metalorganic chemical vapor deposition of GaN

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Authors

SHSean HearneUniversity College Dublin ECEric ChasonBrown University JHJung HanYale University

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Implication

Real-time experimental study demonstrates tensile stress generation in gallium nitride films on sapphire, indicating no measurable relaxation occurs during thermal cycling.

Key Points

To measure the real-time evolution of mechanical stress in gallium nitride films grown on sapphire substrates during metalorganic chemical vapor deposition.
Monitored stress in real time during the metalorganic chemical vapor deposition (MOCVD) of GaN on sapphire at 1050 °C.
Tracked in situ stress behavior during subsequent annealing and thermal cycling phases.
GaN films consistently grew under tensile stress at 1050 °C, despite possessing a 16% compressive lattice mismatch with sapphire.
In situ stress tracking revealed no measurable relaxation of the tensile growth stress during annealing or thermal cycling.

Cite This Study

Hearne et al. (1999) studied this question.

synapsesocial.com/papers/6a8be1545ef9ff12d789535b https://doi.org/10.1063/1.123070

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Implication

Real-time experimental study demonstrates tensile stress generation in gallium nitride films on sapphire, indicating no measurable relaxation occurs during thermal cycling.

Stress evolution during metalorganic chemical vapor deposition of GaN

Discussion

Member takes

Implication

Key Points

Cite This Study

Stress evolution during metalorganic chemical vapor deposition of GaN

Discussion

Member takes

Implication

Key Points

Cite This Study

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