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July 1, 1991Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy

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Authors

SSS. StriteIBM (United States)JRJ. RuanSuzhou University of Science and TechnologyZLZ. LiBrookhaven National Laboratory

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Strite et al. (1991) studied this question.

synapsesocial.com/papers/6a8be172f8241cb45bfb7232https://doi.org/10.1116/1.585381
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