The incorporation of 75As into substitutional lattice sites in silicon in excess of 1021 cm−3 is reported. This has been accomplished by both a scanned cw e-beam and a scanned cw laser operating with dwell times in the range of milliseconds. Both electron concentration (using differential van der Pauw) and atom location measurements (using MeV ion channeling) are reported. Standard thermal processing indicates that these layers are metastable.
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Regolini et al. (1979) studied this question.
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