An analysis is made of experimental results on the capacitance of thin‐film condensers. To find the screened electrostatic potential in a three layer structure a specular electron reflection model is employed which takes into account quantum effects. The resulting interfacial capacitance is in semiquantitative agreement with the measured value for the thin‐film Al–Al2O3–Al condenser.
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J. Krupski (1990) studied this question.
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