Answers are grounded in this paper and cite their sources.
The annealing behavior of photoconductance in electron-irradiated semi-insulating GaAs grown by the magnetic-applied liquid-encapsulated Czochralski technique is studied in terms of the electron-irradiation-induced defects. A decrease in photoconductance for samples annealed at 350 °C is attributed to the interband transition of the photoexcited electrons within the electron-irradiation-induced defect observed at around 0.98 eV using infrared absorption spectroscopy. The recovery of the photoconductance for samples annealed above 400 °C is enhanced by the annihilation of the 0.98-eV defect, accompanied by the photoquenching of the photoconductance below 140 K. An unquenchable component in photoconductance appeared by an annealing above 600 °C is proposed to be a VAs-CAs complex by photoluminescence measurements.
No takes yet. Share an insight, caveat, or question.
Kuriyama et al. (1991) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: