Both n- and p-type ion-implanted GaAs and InP have been annealed at temperatures up to 880 and 760 °C, respectively, using a ’’close-contact’’ capless annealing technique. In this annealing process the flat, implanted surface of the semiconductor is placed in close contact with another flat surface, usually a Si3N4 encapsulated identical semiconductor. Samples annealed in such a proximity manner show no detectable sign of decomposition and exhibit state of the art electrical performance. This is the first report of successful capless annealing of InP.
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Bálint Molnár (1980) studied this question.
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