Gallium arsenide Schottky-barrier field-effect transistors have been fabricated in an n-type film produced by sulfur implantation in a Cr-doped semi-insulating GaAs substrate. The conditions of the implantation and the resulting electrical properties of the film are presented. The FET devices are described and the measured current-voltage characteristics of this device are discussed.
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Welch et al. (1974) studied this question.
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