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GaAs is usually contaminated by carbon and zinc due to its growth conditions. Acting as shallow acceptors these substitutional impurities substantially determine the electrical and optical behaviour of this material. The authors measured the far infrared absorption spectra due to optical transitions of holes bound to these acceptors in LEC grown GaAs at T approximately=1.2 K, B
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Atzmüller et al. (1991) studied this question.
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