We have studied heavily doped GaAs:Sb and GaAs:In by temperature-dependent Hall effect and photoluminescence spectroscopy. Both samples had good mobilities and the GaAs:In was semi-insulating. We have found a new deep level in GaAs:Sb at 0.47 eV below the conduction band. Both samples showed new weak luminescence bands near the intrinsic edge which are as yet unidentified.
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Mitchel et al. (1985) studied this question.
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