High-energy stimulated emission in GaAs quantum wells coupled with (Si2)x(GaAs)1−x barriers (ℏω≳E L, E X)

Data are presented showing that a small GaAs quantum well (Lz≊80 Å), the middle third of which is replaced with a (Si2)x(GaAs)1−x ‘‘barrier’’ (27 Å, x≳0.2), is capable of stimulated emission (77 K) at energies ℏω≳EL(Si+GaAs), EX(Si+GaAs).