Spectroscopic analysis reveals uncompensated zinc-vacancy acceptors in zinc oxide nanocrystals, suggesting a feasible pathway toward stable p-type conductivity.
While zinc oxide (ZnO) has potential for optoelectronic applications, the lack of reliable p-type doping remains a major challenge. We provide evidence that ZnO nanocrystals contain uncompensated acceptors. IR absorption peaks at liquid-helium temperatures suggest a hydrogenic acceptor with a hole binding energy of 0.4–0.5 eV. Electron paramagnetic resonance (EPR) measurements in the dark showed a resonance at g=2.003, characteristic of acceptors that involve a zinc vacancy. An EPR resonance due to vacancy hydrogen complexes was observed after exposure to light. Given the lack of alternatives, vacancy complexes may provide a feasible route toward p-type conductivity.
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Teklemichael et al. (2011) studied this question.
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