Coherent anti-Stokes Raman spectroscopy has been employed for the diagnosis of rf discharges of silane (SiH4) and disilane (Si2H6). The signal intensities from silane and disilane have been measured as a function of time after switching-on the rf power supplied to SiH4 and Si2H6 gas in a closed reaction chamber. From this measurement, the loss rates of silane and disilane have been determined directly as functions of the rf-power density and gas pressure for the first time. The rate of formation of SiH4 in disilane discharge plasmas has also been determined.
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Hata et al. (1986) studied this question.
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