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An analysis of element incorporation from a thermodynamic viewpoint is described for the vapour-phase epitaxy (metal-organic vapour-phase epitaxy (MOVPE), hydride (or halide) vapour-phase epitaxy (HVPE) and molecular beam epitaxy (MBE)) of group III nitrides. The driving force of binary nitrides and the vapour-solid distribution relationship for ternary and quaternary nitrides are discussed. It is shown that the growth rate and alloy composition of group III nitrides are thermodynamically controlled. The thermodynamically predicted orders in which binary nitrides incorporate into alloys are very similar for all epitaxial methods and the order is basically governed by the Gibbs free energy of formation of the binary nitrides irrespective of the growth method.
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Koukitu et al. (2001) studied this question.
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