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Large anisotropy in minority carrier diffusion length and specific conductivity is observed in epitaxial layers of GaInP2 alloys with CuPtB-type ordering. Both the diffusion length and specific conductivity are enhanced, by factor of 10, in the [110] direction, parallel to the line of intersection of the ordered (1–11) and (−111) planes with the (001) growth surface. The reduction in transport length in the [1–10] direction is attributed to carrier scattering at domain boundaries. No transport anisotropy is observed in disordered GaInP2 epitaxial layers.
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Chernyak et al. (1997) studied this question.
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