The electrical performance of single-element metallic contacts on CdS and CdSe is classified according to a simple scheme. It is shown that the valence of reactive metals correlates with barrier height, which we relate to a simple doping effect. By considering practical constraints as well as electrical performance, In is identified as being a uniquely useful element for forming an injecting electrode on these semiconductors.
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Freeman et al. (1981) studied this question.
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