Al and Au interfaces with UHV-cleaved CdS(101̄0) surfaces have been probed via soft x-ray photoemission spectroscopy. We find that Al produces a highly localized reaction at the metal-semiconductor interface, while Au promotes interface diffusion. These bonding differences appear to be characteristic of ionic semiconductor–metal interfaces in general.
No takes yet. Share an insight, caveat, or question.
Brillson et al. (1980) studied this question.