Resonant Raman scattering in electron-irradiated GaAs has been studied. Enhancements in the scattering cross section of both intrinsic and defect-induced phonon modes at the fundamental absorption edge are reported. The experimental results are compared quantitatively with theory. A new scattering mechanism involving elastic scattering between electrons and defects is proposed to explain the resonance of the defect-induced Raman modes.
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Berg et al. (1986) studied this question.
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