p-type CdSe grown by molecular beam epitaxy using a nitrogen plasma source

We report the growth of p-type CdSe having zinc blende structure with the hole concentration of 1×1017 cm−3 by molecular beam epitaxy using a nitrogen plasma source. The electrical and optical properties of CdSe:N epilayers are characterized by Hall and photoluminescence (PL) measurements. PL spectra from p-type CdSe:N epilayers at 14 K show dominant emission associated with a neutral donor-bound excitation at 1.745 eV and two kinds of donor-acceptor pair emission bands with zero phonon energies of 1.724 and 1.695 eV. An Au/p-CdSe:N electrode is examined as ohmic contact for p-ZnSe in terms of current-voltage characteristic. It is shown that the Au p-CdSe electrode works as an ohmic contact for p-ZnSe.