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We describe a low-resistance quasi-ohmic contact to p-ZnSe which involves the injection of holes from heavily doped ZnTe into ZnSe via a Zn(Se,Te) pseudograded band gap region. The specific contact resistance is measured to be in the range of 2–8×10−3 Ω cm2. The graded heterostructure scheme is incorporated as an efficient injector of holes for laser diode and light emitting diode devices, demonstrating the usefulness of this new contact scheme at actual device current densities.
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Fan et al. (1992) studied this question.
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