Lithium-doped ZnS epitaxial layers have been grown on GaAs substrates by metalorganic vapor phase epitaxy, using cyclopentadienyllithium as the dopant. Low-temperature photoluminescence spectra have shown the presence of lithium acceptors in the grown layers. The electrical resistivity decreased with increasing sublimation temperature of lithium dopant. The lowest resistivity achieved was about 4×102 Ω·cm and the highest p-type carrier concentration was 7.5×1015 cm-3.
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Mitsuishi et al. (1990) studied this question.
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