Effects of Lattice Mismatch on Crystallographic Properties of ZnS Grown on GaP and GaAs by MOCVD

The unusual phenomenon that largely lattice-mismatched ZnS layers grown on GaAs by MOCVD show better surface morphology and crystalline quality than less mismatched ZnS layers on GaP has been investigated by X-ray diffraction measurements. The results indicate that this phenomenon can be ascribed to the strain-relaxation taking place at an earlier stage of epitaxial growth on GaAs than on GaP substrates.