Growth of ZnS by Metalorganic Chemical Vapor Deposition

ZnS epilayers are grown on GaP and GaAs substrates by a low pressure metalorganic chemical vapor deposition technique using dietylzinc (DEZ) or dimethylzinc (DMZ) and H2S as source materials. Good epitaxial layers of ZnS are grown at a substrate temperature T G of 370 to 400°C at a flow rate ratio, [H2S]/[DEZ] or [DMZ]≃3.0. A typical growth rate of ZnS layers at T G =375°C is ∼4 µm/hr for the DEZ/H2S system and ∼3 µm/hr for the DMZ/H2S system.