MOCVD Growth of ZnSxSe1-x Epitaxial Layers Lattice-Matched to GaAs Using Alkyls of Zn, S and Se

ZnS x Se1-x epitaxial layers have been grown on GaAs (100) substrates by metalorganic chemical vapor deposition (MOCVD) using Zn-, S- and Se-alkyls. With this source combination, the premature reaction typically encountered in the conventional MOCVD of zinc chalcogenides using Zn-alkyls and H2S or H2Se can be eliminated. The composition of ZnS x Se1-x is easily controlled by the transport rates of S- and Se-alkyls. High crystalline quality of lattice matched samples is evident from the surface morphology and the line width of double crystal X-ray diffraction.