A W-band power amplifier with Class-E tuning in a 0.13 μm SiGe BiCMOS technology is presented. Voltage swing beyond BVCBOis enabled by the cascode topology, low upper base resistance, and minimally overlapping current-voltage waveforms. At 93 GHz with 4.0 V bias, the peak power-added efficiency and saturated output power are measured to be 40.4% and 17.7 dBm, respectively. With the bias increased to 5.2 V, the peak power-added efficiency and saturated output power at 93 GHz are measured to be 37.6% and 19.3 dBm, respectively.
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Song et al. (2015) studied this question.
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