This letter presents a four-way power combinedD-band power amplifier (PA) in 0.13-μ mSiGe technology. The conventional cascode topology is modified by adding an additional interstage network between the common-emitter (CE) and common-base (CB) devices. Further techniques, such as power combining and adaptive bias circuits, are implemented to boost the power generation and the efficiency of the amplifier. The realized PA exhibits a saturated output power of 19.6 dBm with a maximum power-added-efficiency (PAE) of 9.5% at 130 GHz, which is a leading-edge performance among the reported silicon (Si)D-band PAs in similar technologies. The small-signal gain peaks at 16 dB and the PA has a 3-dB bandwidth of 18 GHz.
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Aksoyak et al. (2022) studied this question.
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