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A dual-mode (CDMA/AMPS) power amplifier has been successfully implemented by using a monolithic SiGe/Si heterojunction bipolar transistor (HBT) foundry process for cellular handset (824-849 MHz) applications. The designed two-stage power amplifier satisfies both CDMA and AMPS requirements in output power, linearity, and efficiency. At V/sub cc/=3 V,the power amplifier shows an excellent linearity (first ACPR12:1) up to V/sub cc/=4 V, with spurs measured to be <-22 dBc in CDMA outputs at two specific tuning angles, but with no spur in AMPS outputs at any tuning angle.
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Tseng et al. (2000) studied this question.
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