An analysis of distortion in bipolar transistors using integral charge control model and Volterra series

A new analysis approach to understand and minimize nonlinear distortion in bipolar transistors is presented. It employs a recently developed nonlinear device model, known as the integral charge control model, and a powerful analysis tool: the Volterra series representation. The salient analytical features of this paper are: a simple representation of the Volterra transfer functions of the transistor, compact expressions for frequency-dependent distortion coefficients, and physically meaningful asymptotic low- and high-frequency distortion coefficients. The analytical results have been experimentally verified. Finally, specific design examples are furnished to illustrate the powerful nature of the above analytical expressions.