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The formation of oxide films on resistively heated silicon in dry oxygen was followed in situ using a computer controlled ellipsometer. For (111) silicon surfaces two distinct growth regions were observed. Our results on the growth above 300Å were found to agree with previous investigations. For films 200Å or less (for which little previous data exist) the kinetics did not obey any existing model of the growth process. The rate of growth of the oxide on (111) surfaces in the 20–200Å region was investigated from 700° to 950°C and at oxygen pressures between 50 and 1200 Torr. A possible explanation of the thin film kinetics is given and its relation to the thick film data is discussed.
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Hopper et al. (1975) studied this question.
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