Rate constants for light-enhanced thermal oxidation of silicon

In response to a 1-W (56.6 W cm−2) laser beam stimulation at 5145 A, oxidation enhancement is found to occur and data are given for Si(111) and Si(100) from 900 to 750 °C. Using a heat transfer calculation, the thermal contribution and the nonthermal or optical contribution to the total enhancement have been separated. Analysis of the data in terms of linear and parabolic rate constants shows that the major effect resides in B rather than in B/A, with differences existing between the (111) and (100) orientations. A theoretical explanation is suggested to account for this behavior.