Low pressure metalorganic chemical-vapor deposition of cubic GaN over (100) GaAs substrates

We report on the low pressure metal organic chemical-vapor deposition of single crystal cubic GaN films over (100) GaAs substrates. Using photoluminescence and direct optical absorption measurements we estimate the band gap for c-GaN at room temperature to be 3.3 eV. Reflection high energy electron diffraction, x-ray, transmission electron microscopy, optical absorption, and room-temperature photoluminescence data are presented to establish the quality of a 0.8-μm-thick cubic GaN film over (100) GaAs substrate. Preliminary measurement results for the carrier density and mobility of the as-deposited c-GaN film are also presented.