Answers are grounded in this paper and cite their sources.
Photoluminescence (PL), secondary-ion mass spectroscopy (SIMS), and cross-sectional transmission electron microscopy (TEM) measurements have been performed to assess surface segregation of In in GaAs during molecular-beam epitaxial growth of InAs monolayers between GaAs layers. The InAs growth temperature at which In segregation is detectable depends on the characterization technique used; using PL it is above 420 °C, but from TEM and SIMS it is 420 and 340 °C, respectively. These results highlight the need for complementary information to provide a better understanding of the segregation phenomenon. SIMS data show that the total amount of In segregating and the extent of its distribution both increase with InAs deposition temperature.
No takes yet. Share an insight, caveat, or question.
Dosanjh et al. (1993) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: