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A metal-insulator-semiconductor field-effect transistor (MISFET) using the InAs-GaAs superlattice as a channel layer has been successfully demonstrated for the first time. Device structure was grown by molecular beam epitaxy. The MISFET with 1.0 μm gate length exhibits a maximum external dc transconductance of 212 mS/mm at Vds =3.0 V and Vg =−1.5 V. This value is high among 1.0 μm gate length devices.
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Nishiyama et al. (1989) studied this question.
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