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December 1, 1988IEEE Electron Device Letters

Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETs

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JKJinbo KuangSuzhou Research InstitutePTP.J. TaskerCardiff UniversityGWG.W. WangMicroelectronics Research Development (United States)

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Kuang et al. (1988) studied this question.

synapsesocial.com/papers/6a907c616e7e048e0989db6bhttps://doi.org/10.1109/55.20418
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