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February 1, 1986IEEE Electron Device Letters

Inverted GaAs/AlGaAs modulation-doped field-effect transistors with extremely high transconductances

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Authors

NCN.C. CirilloHoneywell (United States)
M. S. Shur
M. S. ShurUniversity Graduate CenterJAJ. AbrokwahON Semiconductor (United States)

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Cirillo et al. (1986) studied this question.

synapsesocial.com/papers/6a907c616e7e048e0989db6dhttps://doi.org/10.1109/edl.1986.26298
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Also Consider

Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Bias dependence and light sensitivity of (Al, Ga)As/GaAs MODFET's at 77 K1983 · 78 citations
  2. 2Charge control model of inverted GaAs–AlGaAs modulation doped FET’s (IMODFET’s)1984 · 11 citations