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The electron-hole plasma generation mechanism in n-type InSb was studied with picosecond CO2laser pulses. It was found that at very high intensities the electron ionization can be adequately described by a tunneling mechanism. The relevance of the present study to the understanding of laser-matter interaction at high intensities and the laser-induced damage process in semiconductors are discussed.
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Hoi Sing Kwok (1982) studied this question.
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