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The far-infrared photoconductivity technique is applied to study the energy spectrum of shallow indium donors in CdTe layers grown by molecular-beam epitaxy. Accurate experimental data are obtained throughout the energy range relevant to study the resonant polaron effect, including the reststrahlen band. A detailed comparaison of the measured 1s{→}2p⁺ transition energies is made with the predictions of a variational calculation, in which the electron-phonon interaction is treated as a second-order perturbation. An overall good agreement is found between experiment and theory with the material parameters found in the literature. This gives a Fr\"ohlich coupling constant {α}=0.286. {} 1996 The American Physical Society.
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Grynberg et al. (1996) studied this question.
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