( Al , Ga ) As epitaxial layers with AlAs mol fraction between 0.25 and 0.5 have been grown by molecular beam epitaxy. A substrate temperature range of 600°–750°C has been investigated. Excellent surface morphologies were obtained in this entire temperature range for AlAs mol fractions of x ≤ 30 % . The surface morphology was, however, observed to first degrade and later improve with increasing substrate temperature for x ≥ 40 % for a constant group V/III ratio. Increased group V/III ratio improved the surface morphology in the substrate temperature range of 630°–690°C for x ≥ 40 % .
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Morkoç̌ et al. (1982) studied this question.