Answers are grounded in this paper and cite their sources.
The early stages of the molecular beam epitaxial growth of InxGa1−xAs on GaAs have been studied with reflection high-energy electron diffraction. Measurement of the in-plane surface lattice constant as a function of film thickness clearly showed a pseudomorphic to incoherent transition. Changes in the diffraction streaks indicated a corresponding two- to three-dimensional growth transition. The results are compared with various models of dislocation nucleation and good support is found for heterogeneous misfit accommodation by 60° dislocations.
No takes yet. Share an insight, caveat, or question.
G. L. Price (1988) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: