This paper proposes a new resonant gate drive circuit for driving both the control metal oxide semiconductor field effect transistor (MOSFET) and synchronous MOSFET in a synchronous buck converter. The circuit can recover more than 70% of the conventional gate drive loss. More importantly, the driving circuit can also reduce the switching loss. It charges and discharges the gate of MOSFET at a constant current during switching interval. Other advantages of the proposed circuit include better noise immunity for dv/dt turn on, less sensitive to parasitic track inductance. The experimental prototype shows that the loss reduction is 10% of the output power for 12 V input, 1.5 V/15 A output with switching frequency of 1 MHz.
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Yang et al. (2007) studied this question.
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