Amber-green light-emitting diodes using order-disorder AlxIn1−xP heterostructures

We demonstrate amber-green emission from AlxIn1–xP light-emitting diodes (LEDs) with luminescence peaked at 566 nm and 600 nm. The LEDs are metamorphically grown on GaAs substrates via a graded InyGa1–yAs buffer layer and feature electron confinement based on the control of AlxIn1–xP CuPt atomic ordering. A control sample fabricated without order-disorder carrier confinement is used to illustrate device improvement up to a factor of 3 in light output due to confinement at drive currents of 40 A/cm2. The light output at room temperature from our AlxIn1–xP LED structure emitting at 600 nm is 39% as bright as a GaxIn1–xP LED emitting at 650 nm.