Thin film transistors (TFTs) utilizing TiInZnO (TIZO) channel layers with different Ti molar ratios were fabricated by using a solution process. X-ray photoelectron spectroscopy spectra for the TIZO film exhibited that the Ti 2p1/2 peak intensity increased with increasing Ti molar ratio. The addition of the Ti atoms in the TIZO films changed their carrier concentration due to the decrease of O2− ions, resulting in a positive shift of the threshold voltage and in a decrease of the off-current. The on/off current ratio of the TFTs with a 10% Ti molar ratio was as large as 0.21 × 107.
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Chong et al. (2011) studied this question.
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