By inclining the injection stripe of a multiple layer stacked self-assembled InAs quantum dot (SAQD) laser diode structure of 6/spl deg/ with respect to the facets, high-power and broad-band superluminescent diodes (SLDs) have been fabricated. It indicates that high-performance SLD could be easily realized by using SAQD as the active region.
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Zhang et al. (2004) studied this question.
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