Characteristics of the metal insulator semiconductor structure:AlN/Si

Single-crystal AlN layers have been grown on Si substrates at ∼1200 °C using metalorganic chemical vapor deposition. The metal/AlN/Si MIS structures have been investigated by the MIS conductance method. It was found that the interface-state density Nss and electron capture cross section σn in the depletion region are of the order of 1011 eV−1 cm−2 and 10−17 cm, respectively.